Indranath Mukhopadhyay

Dr. Indra Mukhopadhyay received the B.S. (Honours) and M.S. degrees in Physics from the University of Burdwan, India, in 1974 and 1976, respectively and received the M.Tech. degree in Electronics and Electrical Communication with specialization in Microelectronics and Semiconductor Devices, from the Indian Institute of Technology, Kharagpur, in 1981. He made the semiconductor diode using plasma oxidation and ion implantation technique for the first time in the continent, in 1980. In 1981 he joined the Department of Physics, University of …